View IRL3102PBF_1154091.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD- 95658
IRL3102PBF
HEXFET(R) Power MOSFET
Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive l Ideal for CPU Core DC-DC Converters l Fast Switching l Lead-Free Description
l
D
VDSS = 20V RDS(on) = 0.013
G S
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry.
ID = 61A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C V GS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100s) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
61 39 240 89 0.71 10 14 220 35 8.9 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
1.4 62
Units
C/W
07/30/04
IRL3102PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 0.70 36 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.015 VGS = 4.5V, ID = 37A 0.013 VGS = 7.0V, ID = 37A V VDS = VGS , ID = 250A S VDS = 16V, ID = 35A 25 VDS = 20V, VGS = 0V A 250 VDS = 10V, V GS = 0V, TJ = 150C 100 VGS = 10V nA -100 VGS = -10V 58 ID = 35A 14 nC VDS = 16V 21 VGS = 4.5V, See Fig. 6 VDD = 10V ID = 35A ns RG = 9.0, VGS = 4.5V RD = 0.28, Between lead, 4.5 6mm (0.25in.) nH G from package 7.5 and center of die contact 2500 VGS = 0V 1000 pF VDS = 15V 360 = 1.0MHz, See Fig. 5 Typ. 0.016 10 130 80 110
D
S
Source-Drain Ratings and Characteristics
IS
I SM
V SD t rr Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 61 showing the A G integral reverse 240 S p-n junction diode. 1.3 V TJ = 25C, IS = 37A, VGS = 0V 59 88 ns TJ = 25C, IF = 35A 110 160 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature.
ISD 35A, di/dt 100A/s, VDD V(BR)DSS,
TJ 150C
Starting TJ = 25C, L = 0.36mH
RG = 25, IAS = 35A.
Pulse width 300s; duty cycle 2%.
IRL3102PBF
1000
VGS VGS 15V 10V 12V 8.0V 10V 6.0V 8.0V 4.0V 6.0V 3.0V 4.0V 3.0V BOTTOM 2.5V BOTTOM 2.5V TOP TOP
1000
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS VGS 15V 10V 12V 8.0V 10V 6.0V 8.0V 4.0V 6.0V 4.0V 3.0V 3.0V BOTTOM 2.5V BOTTOM 2.5V TOP TOP
100
100
2.5V
20s PULSE WIDTH TJ = 25 C
1 10 100
2.5V
20s PULSE WIDTH TJ = 150 C
1 10 100
10 0.1
10 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 C TJ = 150 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 61A
I D , Drain-to-Source Current (A)
1.5
100
1.0
10
0.5
1 2 3 4
V DS = 15V 20s PULSE WIDTH 5 6 7
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL3102PBF
4200 3600
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
15
ID = 35A VDS = 16V
12
C, Capacitance (pF)
3000 2400 1800
Ciss
9
Coss
1200 600 0 1 10 100
6
Crss
3
0 0 20 40 60 80 100
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
I D , Drain Current (A)
100
TJ = 150 C
100us
TJ = 25 C
10
1ms 10 10ms
1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
1 1
TC = 25 C TJ = 150 C Single Pulse
10 100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL3102PBF
70
500
EAS , Single Pulse Avalanche Energy (mJ)
TOP
400
60
BOTTOM
ID 16A 22A 35A
ID , Drain Current (A)
50 40 30 20 10 0 25 50 75 100 125 150
300
200
100
0 25 50 75 100 125 150
TC , Case Temperature ( C)
Starting TJ , Junction Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Avalanche Energy Vs. Drain Current
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2
0.1
0.05 0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL3102PBF
R DS (on), Drain-to-Source On Resistance( )
RDS(on), Drain-to-Source On Resistance ( )
0.015
0.020
0.014
0.018
VGS = 4.5V
0.013
0.016
0.014
0.012
0.012
ID = 61A
0.011
VGS = 7.0V
0.010
0.010
0
20
40
60
80
0.008 0 2 4 6 8 10
A
I D , Drain Current (A)
V GS , Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
IRL3102PBF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 10.29 (.405) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
2.87 (.113) 2.62 (.103)
3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
4 15.24 (.600) 14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN
HEXFET
14.09 (.555) 13.47 (.530)
4- DRAIN
4.06 (.160) 3.55 (.140)
4- COLLECTOR
3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES:
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T H E AS S E MB LY LINE "C" INT E R NAT IONAL R E CT IF IE R L OGO PAR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
AS S E MB L Y L OT CODE
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04

▲Up To Search▲

Price & Availability of IRL3102PBF

	To Download IRL3102PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .